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      On the structure and electronic properties of the GaAs(113̄)B surface

      Author(s): ,   ,
      Publication date Created:
      Publication date (Print):
      Journal: Surface Science
      Publisher: Elsevier BV

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          Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces

          D Chadi (1984)
          Article 0 comments Cited 107 times – based on 0 reviews     Review now
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            Angle-resolved photoemission, valence-band dispersionsE(k→), and electron and hole lifetimes for GaAs

            J Knapp, T. -C. Chiang, M Aono … (1980)
            Article 0 comments Cited 107 times – based on 0 reviews     Review now
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              Vapor pressures and phase equilibria in the GaAs system

              J.R. Arthur (1967)
              Article 0 comments Cited 88 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Surface Science
                Abbreviated Title: Surface Science
                Publisher: Elsevier BV
                ISSN (Print): 00396028
                Publication date Created: September 1994
                Publication date (Print): September 1994
                Volume: 316
                Issue: 1-2
                Pages: 157-167
                Article
                DOI: 10.1016/0039-6028(94)91136-3
                SO-VID: bb2fb1e7-b824-4b5d-95a0-56c7a7c430d0
                Copyright © © 1994
                License:

                http://www.elsevier.com/tdm/userlicense/1.0/

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