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      New type InGaAs/InP heterostructure avalanche photodiode with buffer layer

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          Journal
          IEEE Electron Device Letters
          IEEE Electron Device Lett.
          Institute of Electrical and Electronics Engineers (IEEE)
          0741-3106
          July 1981
          July 1981
          : 2
          : 7
          : 179-181
          Article
          10.1109/EDL.1981.25390
          bb387345-3034-4052-b68a-73aad7f62021
          © 1981
          History

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