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      Nature of optically induced defects in Ga1−xAlxAs–GaAs double‐heterojunction laser structures

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      Applied Physics Letters
      AIP Publishing

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          Defect structure introduced during operation of heterojunction GaAs lasers

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            Degradation of CW GaAs double-heterojunction lasers at 300 K

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              Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasers

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                August 15 1974
                August 15 1974
                : 25
                : 4
                : 226-228
                Article
                10.1063/1.1655450
                bb58b6ad-1807-4b58-af3f-37c26cec4d07
                © 1974
                History

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