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      Polytypic transformations in silicon carbide

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      Progress in Crystal Growth and Characterization
      Elsevier BV

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          Plastic deformation of single crystals of sapphire: Basal slip and twinning

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            Eindimensionale Fehlordnung in Kristallen und ihr Einfluss auf die Röntgeninterferenzen. I. Berechnung des Fehlordnungsgrades aus den Röntgenintensitäten

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              Thermodynamic Study of SiC Utilizing a Mass Spectrometer

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                Author and article information

                Journal
                Progress in Crystal Growth and Characterization
                Progress in Crystal Growth and Characterization
                Elsevier BV
                01463535
                January 1983
                January 1983
                : 7
                : 1-4
                : 259-307
                Article
                10.1016/0146-3535(83)90034-5
                bc8c86a4-9aa0-4404-a733-44720dbb72ff
                © 1983

                http://www.elsevier.com/tdm/userlicense/1.0/

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