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Determination of diffusion length of electron beam induced minority carriers in polycrystalline GaAs
Author(s):
O. Paz
,
J. M. Borrego
Publication date
Created:
June 1983
Publication date
(Print):
June 1983
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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Electron Channelling Contrast Imaging (ECCI)
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Theory of life time measurements with the scanning electron microscope: Steady state
F. Berz
,
H.K. Kuiken
(1976)
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Measurement of Diffusion Lengths in Direct‐Gap Semiconductors by Electron‐Beam Excitation
David Kyser
,
David Wittry
(1967)
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Investigation of minority‐carrier diffusion lengths by electron bombardment of Schottky barriers
D. Wittry
,
C. Wu
(1978)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
June 1983
Publication date (Print):
June 1983
Volume
: 42
Issue
: 11
Pages
: 958-960
Article
DOI:
10.1063/1.93813
SO-VID:
be7c9bab-5b9d-45d2-91e4-a1d1e398f003
Copyright ©
© 1983
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