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      Determination of diffusion length of electron beam induced minority carriers in polycrystalline GaAs

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      Applied Physics Letters
      AIP Publishing

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          Theory of life time measurements with the scanning electron microscope: Steady state

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            Measurement of Diffusion Lengths in Direct‐Gap Semiconductors by Electron‐Beam Excitation

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              Investigation of minority‐carrier diffusion lengths by electron bombardment of Schottky barriers

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                June 1983
                June 1983
                : 42
                : 11
                : 958-960
                Article
                10.1063/1.93813
                be7c9bab-5b9d-45d2-91e4-a1d1e398f003
                © 1983
                History

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