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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

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      Most cited references 11

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      Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

       R. People (1986)
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        Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

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          Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

           E. Fitzgerald (1992)
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            Author and article information

            Journal
            Applied Physics Letters
            Appl. Phys. Lett.
            AIP Publishing
            0003-6951
            1077-3118
            April 06 1998
            April 06 1998
            : 72
            : 14
            : 1718-1720
            10.1063/1.121162
            © 1998
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