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      Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

      , , , ,

      Applied Physics Letters

      AIP Publishing

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          Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

           R. People (1986)
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            Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

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              Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

               E. Fitzgerald (1992)
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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                April 06 1998
                April 06 1998
                : 72
                : 14
                : 1718-1720
                Article
                10.1063/1.121162
                © 1998
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