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      Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

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          Spectroscopic Ellipsometry

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            Applied physics. Transparent electronics.

            John Wager (2003)
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              Oxygen vacancies and donor impurities in β-Ga2O3

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                January 2018
                January 2018
                : 112
                : 1
                : 012103
                Affiliations
                [1 ]Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
                [2 ]Terahertz Materials Analysis Center, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE 58183 Linköping, Sweden
                [3 ]Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
                [4 ]Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
                [5 ]Tamura Corporation, Sayama, Saitama 350-1328, Japan
                [6 ]National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
                [7 ]Leibniz Institute for Polymer Research, 01069 Dresden, Germany
                Article
                10.1063/1.5011192
                bf602241-0a10-45e1-bcf6-a507d4aafcb8
                © 2018

                https://publishing.aip.org/authors/rights-and-permissions

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