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      Modeling of compound semiconductors: Analytical bond-order potential for Ga, As, and GaAs

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          Finite strain isotherm and velocities for single-crystal and polycrystalline NaCl at high pressures and 300°K

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            Stresses in semiconductors:Ab initiocalculations on Si, Ge, and GaAs

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              First-principles study of the atomic reconstructions and energies of Ga- and As-stabilized GaAs(100) surfaces

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                1095-3795
                July 2002
                July 2002
                : 66
                : 3
                Article
                10.1103/PhysRevB.66.035205
                bf914bc7-fdbf-4a5b-bce6-062bcc8b5d8a
                © 2002

                http://link.aps.org/licenses/aps-default-license

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