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      Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

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      Journal of Physics D: Applied Physics
      IOP Publishing

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          The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

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            Exploring atomic defects in molybdenum disulphide monolayers

            Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.
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              MoS2 transistors with 1-nanometer gate lengths

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                Author and article information

                Journal
                Journal of Physics D: Applied Physics
                J. Phys. D: Appl. Phys.
                IOP Publishing
                0022-3727
                1361-6463
                February 14 2018
                February 14 2018
                January 24 2018
                : 51
                : 6
                : 065110
                Article
                10.1088/1361-6463/aaa58c
                c02e6eb0-ac59-42d0-8057-958e604e8b29
                © 2018

                http://iopscience.iop.org/info/page/text-and-data-mining

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