Sign of inverse spin Hall voltages generated by ferromagnetic resonance and temperature gradients in yttrium iron garnet platinum bilayers

Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.

The precession of the magnetization of a ferromagnet is shown to transfer spins into adjacent normal metal layers. This "pumping" of spins slows down the precession corresponding to an enhanced Gilbert damping constant in the Landau-Lifshitz equation. The damping is expressed in terms of the scattering matrix of the ferromagnetic layer, which is accessible to model and first-principles calculations. Our estimates for permalloy thin films explain the trends observed in recent experiments.