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      Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

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          Most cited references31

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          Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

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            A charge-sheet model of the MOSFET

            J.R. Brews (1978)
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              Transport Properties of Electrons in Inverted Silicon Surfaces

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                August 1980
                August 1980
                : 27
                : 8
                : 1497-1508
                Article
                10.1109/T-ED.1980.20063
                c0e77eee-40c6-434f-942d-1f869e82348d
                © 1980
                History

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