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      Transient annealing of semiconductors by laser, electron beam and radiant heating techniques

      Reports on Progress in Physics
      IOP Publishing

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          Stability of a Planar Interface During Solidification of a Dilute Binary Alloy

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            Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

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              Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in Silicon

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                Author and article information

                Journal
                Reports on Progress in Physics
                Rep. Prog. Phys.
                IOP Publishing
                0034-4885
                1361-6633
                August 01 1985
                August 01 1985
                : 48
                : 8
                : 1155-1233
                Article
                10.1088/0034-4885/48/8/002
                c118c26a-9cb9-49cd-ab2c-dbd83bd59305
                © 1985
                History

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