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      Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

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      Applied Physics Letters
      AIP Publishing

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          Review on high-k dielectrics reliability issues

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            Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

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              Design considerations in scaled SONOS nonvolatile memory devices

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                March 2010
                March 2010
                : 96
                : 9
                : 093506
                Article
                10.1063/1.3337103
                c1527283-626a-41f8-be54-0a7c2c277814
                © 2010
                History

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