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      Detection of methylation on dsDNA using nanopores in a MoS2 membrane

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          Abstract

          Methylation in DNA has been shown to be a reliable diagnostic biomarker for carcinogenesis.

          Abstract

          Methylation at the 5-carbon position of the cytosine nucleotide base in DNA has been shown to be a reliable diagnostic biomarker for carcinogenesis. Early detection of methylation and intervention could drastically increase the effectiveness of therapy and reduce the cancer mortality rate. Current methods for detecting methylation involve bisulfite genomic sequencing, which are cumbersome and demand a large sample size of bodily fluids to yield accurate results. Hence, more efficient and cost effective methods are desired. Based on our previous work, we present a novel nanopore-based assay using a nanopore in a MoS 2 membrane, and the methyl-binding protein (MBP), MBD1x, to detect methylation on dsDNA. We show that the dsDNA translocation was effectively slowed down using an asymmetric concentration of buffer and explore the possibility of profiling the position of methylcytosines on the DNA strands as they translocate through the 2D membrane. Our findings advance us one step closer towards the possible use of nanopore sensing technology in medical applications such as cancer detection.

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          Most cited references41

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          Targeted mutation of the DNA methyltransferase gene results in embryonic lethality

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            NAMD2: Greater Scalability for Parallel Molecular Dynamics

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              Large-Area Epitaxial Monolayer MoS2

              Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over lattice orientation during growth remains a challenge. This is needed to minimize or even avoid the formation of grain boundaries, detrimental to electrical, optical, and mechanical properties of MoS2 and other 2D semiconductors. Here, we report on the growth of high-quality monolayer MoS2 with control over lattice orientation. We show that the monolayer film is composed of coalescing single islands with limited numbers of lattice orientation due to an epitaxial growth mechanism. Optical absorbance spectra acquired over large areas show significant absorbance in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. Even though the interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment via van der Waals interaction, we can easily transfer the grown material and fabricate devices. Local potential mapping along channels in field-effect transistors shows that the single-crystal MoS2 grains in our film are well connected, with interfaces that do not degrade the electrical conductivity. This is also confirmed by the relatively large and length-independent mobility in devices with a channel length reaching 80 μm.
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                Author and article information

                Journal
                NANOHL
                Nanoscale
                Nanoscale
                Royal Society of Chemistry (RSC)
                2040-3364
                2040-3372
                2017
                2017
                : 9
                : 39
                : 14836-14845
                Affiliations
                [1 ]Department of Biomedical Engineering
                [2 ]Rowan University
                [3 ]Glassboro
                [4 ]USA
                [5 ]Department of Material Science and Engineering
                [6 ]University of Illinois at Urbana – Champaign
                [7 ]Urbana
                [8 ]State Key Laboratory of Mechanics and Control of Mechanical Structures
                [9 ]Nanjing University of Aeronautics and Astronautics
                [10 ]Nanjing
                [11 ]China
                [12 ]Department of Electrical Engineering
                [13 ]Stanford University
                [14 ]Stanford
                [15 ]Boise State University
                [16 ]Boise
                [17 ]Department of Physics and Beckman Institute
                [18 ]Department of Bioengineering
                [19 ]Micro and Nanotechnology Laboratory
                Article
                10.1039/C7NR03092D
                5890527
                28795735
                c17ee163-3beb-4083-abba-2f3c7d916a8a
                © 2017
                History

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