Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

Zhang, Zhili; Fu, Kai; Deng, Xuguang; Zhang, Xiaodong; Fan, Yaming; Sun, Shichuang; Song, Liang; Xing, Zheng; Huang, Wei; Yu, Guohao; Cai, Yong; Zhang, Baoshun

doi:10.1109/LED.2015.2483760

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Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

Author(s): Zhili Zhang , Kai Fu , Xuguang Deng , Xiaodong Zhang , Yaming Fan , Shichuang Sun , Liang Song , Zheng Xing , Wei Huang , Guohao Yu , Yong Cai , Baoshun Zhang

Publication date (Print): November 2015

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: November 2015

Publication date (Print): November 2015

Volume: 36

Issue: 11

Pages: 1128-1131

Article

DOI: 10.1109/LED.2015.2483760

SO-VID: c20eb7b3-4321-4921-9813-1ad3b49e531c

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Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Gate Dielectric and Standard Fluorine Ion Implantation