A fractal analysis for the microstructures of β-SiC films

Abstract

Fractal theory is widely used to analyze the topography of surfaces; however, the relationship and characteristics of fractal dimension and microstructures of β-SiC films have not been reported. Using scanning electron microscopy and computer analysis, the microstructures of β-SiC films were evaluated; the films were prepared on AlN substrates by laser chemical vapor deposition using a diode laser and hydrido polycarbosilane as the precursor at different vacuum levels. The effect of vacuum level on the microstructure of β-SiC films was evaluated. The results show that the microstructures of β-SiC films exhibit the characteristics of fractals. Using the box counting method, the fractal dimensions of β-SiC films were calculated to be about 1.94–2.14, providing more fractal identification in evaluating the performance of films.