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      Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy

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      Journal of Applied Physics
      AIP Publishing

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          Gallium arsenide and other compound semiconductors on silicon

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            Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

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              Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                July 2006
                July 2006
                : 100
                : 1
                : 013103
                Article
                10.1063/1.2209068
                c417cdf5-e215-43af-9044-65bec126c164
                © 2006
                History

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