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      Graphene oxide: strategies for synthesis, reduction and frontier applications

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          Abstract

          In this review article, we describe a general introduction to GO, its synthesis, reduction and some selected frontier applications. Its low cost and potential for mass production make GO a promising building block for functional hybrid materials.

          Abstract

          Till now, several innovative methods have been developed for the synthesis of graphene materials including mechanical exfoliation, epitaxial growth by chemical vapor deposition, chemical reduction of graphite oxide, liquid-phase exfoliation, arc discharge of graphite, in situ electron beam irradiation, epitaxial growth on SiC, thermal fusion, laser reduction of polymers sheets and unzipping of carbon nanotubes etc. Generally large scale graphene nanosheets are reliably synthesized utilizing other forms of graphene-based novel materials, including graphene oxide (GO), exfoliated graphite oxide (by thermal and microwave), and reduced graphene oxide. The degree of GO reduction and number of graphene layers are minimized mainly by applying two approaches via chemical or thermal treatments. The promising and excellent properties together with the ease of processability and chemical functionalization makes graphene based materials especially GO, ideal candidates for incorporation into a variety of advanced functional materials. Chemical functionalization of graphene can be easily achieved, by the introduction of various functional groups. These functional groups help to control and manipulate the graphene surfaces and help to tune the properties of the resulting hybrid materials. Importantly, graphene and its derivatives GO, have been explored in a wide range of applications, such as energy generation/storage, optical devices, electronic and photonic devices, drug delivery, clean energy, and chemical/bio sensors. In this review article, we have incorporated a general introduction of GO, its synthesis, reduction and some selected frontier applications.

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            The rise of graphene

            Graphene is a rapidly rising star on the horizon of materials science and condensed matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed matter physics, where quantum relativistic phenomena, some of which are unobservable in high energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.
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              Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

              Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.
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                Author and article information

                Journal
                RSCACL
                RSC Advances
                RSC Adv.
                Royal Society of Chemistry (RSC)
                2046-2069
                2016
                2016
                : 6
                : 69
                : 64993-65011
                Article
                10.1039/C6RA07626B
                c4784782-45d1-49f5-b2c0-861d6b89712e
                © 2016
                History
                Product
                Self URI (article page): http://xlink.rsc.org/?DOI=C6RA07626B

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