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      Oersted-field-induced switching of a ferromagnet on a Si substrate via localized dielectric breakdown of the native SiO2 layer

      1 , 1 , 1 , 1 , 1

      Applied Physics Letters

      AIP Publishing

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Recent developments in magnetocaloric materials

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              Dynamics of field-driven domain-wall propagation in ferromagnetic nanowires.

              Ferromagnetic nanowires are likely to play an important role in future spintronic devices. Magnetic domain walls, which separate regions of opposing magnetization in a nanowire, can be manipulated and used to encode information for storage or to perform logic operations. Owing to their reduced size and dimensionality, the characterization of domain-wall motion is an important problem. To compete with other technologies, high-speed operation, and hence fast wall propagation, is essential. However, the domain-wall dynamics in nanowires has only been investigated in the last five years and some results indicate a drastic slowing down of wall motion in higher magnetic fields. Here we show that the velocity-field characteristic of a domain wall in a nanowire shows two linear regimes, with the wall mobility at high fields reduced tenfold from that at low fields. The transition is marked by a region of negative differential mobility and highly irregular wall motion. These results are in accord with theoretical predictions that, above a threshold field, uniform wall movement gives way to turbulent wall motion, leading to a substantial drop in wall mobility. Our results help resolve contradictory reports of wall propagation velocities in laterally confined geometries, and underscore the importance of understanding and enhancing the breakdown field for practical applications.
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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                July 03 2017
                July 03 2017
                : 111
                : 1
                : 012401
                Affiliations
                [1 ]Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 GSP-105, Nizhny Novgorod, Russia
                Article
                10.1063/1.4990975
                © 2017
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