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1,779
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Charge injection over triangular barriers in unipolar semiconductor structures
Author(s):
R. F. Kazarinov
,
S. Luryi
Publication date
Created:
May 15 1981
Publication date
(Print):
May 15 1981
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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Most cited references
4
Record
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Planar-doped barriers in GaAs by molecular beam epitaxy
L.F. Eastman
,
C.E.C. Wood
,
K. Board
…
(1980)
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A majority‐carrier camel diode
J Shannon
(1979)
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New rectifying semiconductor structure by molecular beam epitaxy
A C Gossard
,
C. Allyn
,
W. Wiegmann
(1980)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
May 15 1981
Publication date (Print):
May 15 1981
Volume
: 38
Issue
: 10
Pages
: 810-812
Article
DOI:
10.1063/1.92140
SO-VID:
c4e6aa13-5286-497f-bcb9-36452412a7b7
Copyright ©
© 1981
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