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      Charge injection over triangular barriers in unipolar semiconductor structures

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      Applied Physics Letters
      AIP Publishing

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          Planar-doped barriers in GaAs by molecular beam epitaxy

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            A majority‐carrier camel diode

            J Shannon (1979)
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              New rectifying semiconductor structure by molecular beam epitaxy

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                May 15 1981
                May 15 1981
                : 38
                : 10
                : 810-812
                Article
                10.1063/1.92140
                c4e6aa13-5286-497f-bcb9-36452412a7b7
                © 1981
                History

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