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      Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

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          Most cited references 20

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          Stabilities of single-layer and bilayer steps on Si(001) surfaces

           D Chadi (1987)
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            Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces

             D Chadi (1984)
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              Polar-on-nonpolar epitaxy

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                April 08 2013
                April 08 2013
                : 102
                : 14
                : 142102
                10.1063/1.4801498
                © 2013
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