13
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      III–nitrides: Growth, characterization, and properties

      , , ,

      Journal of Applied Physics

      AIP Publishing

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references 150

          • Record: found
          • Abstract: not found
          • Article: not found

          Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            GaN: Processing, defects, and devices

             S Pearton,  F Ren,  R. J. Shul (1999)
              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Linewidth dependence of radiative exciton lifetimes in quantum wells.

              (1987)
                Bookmark

                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                February 2000
                February 2000
                : 87
                : 3
                : 965-1006
                Article
                10.1063/1.371971
                © 2000
                Product

                Comments

                Comment on this article