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      III–nitrides: Growth, characterization, and properties

      Author(s): , , ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

          B. Sverdlov, H Morkoç, S. Strite … (1994)
          Article 0 comments Cited 514 times – based on 0 reviews     Review now
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            Linewidth dependence of radiative exciton lifetimes in quantum wells.

            (1987)
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              GaN: Processing, defects, and devices

              S Pearton, F Ren, R. J. Shul … (1999)
              Article 0 comments Cited 333 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: February 2000
                Publication date (Print): February 2000
                Volume: 87
                Issue: 3
                Pages: 965-1006
                Article
                DOI: 10.1063/1.371971
                SO-VID: c7eadb09-34e3-4c64-89a2-22a9cd67e393
                Copyright © © 2000
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