Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Lo, S.-H.; Wang, W.; Buchanan, D.A.; Taur, Y.

doi:10.1109/55.568766

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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Author(s): S.-H. Lo , D.A. Buchanan , Y. Taur , W. Wang

Publication date (Print): May 1997

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, V.L. Rideout … (1974)

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Fowler‐Nordheim Tunneling into Thermally Grown SiO2

M. Lenzlinger, E. H. Snow (1969)

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Self-Consistent Results forn-Type Si Inversion Layers

Frank Stern (1972)

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Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: May 1997

Publication date (Print): May 1997

Volume: 18

Issue: 5

Pages: 209-211

Article

DOI: 10.1109/55.568766

SO-VID: c99cf783-7b18-4c67-a022-a0d760fdf301

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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

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Reviews of mathematical modeling in cancer

Most cited references 10

Design of ion-implanted MOSFET's with very small physical dimensions

Fowler‐Nordheim Tunneling into Thermally Grown SiO2

Self-Consistent Results forn-Type Si Inversion Layers

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