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      Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

      1 , 1 , 2 , 1
      Applied Physics Letters
      AIP Publishing

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          An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

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            Thermodynamic stability of binary oxides in contact with silicon

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              Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                November 23 2015
                November 23 2015
                : 107
                : 21
                : 213501
                Affiliations
                [1 ]Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
                [2 ]School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
                Article
                10.1063/1.4936329
                ca47d38e-79d7-400c-878a-a7ff97bb12b1
                © 2015
                Product
                Self URI (article page): http://aip.scitation.org/doi/10.1063/1.4936329

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