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      Chemically assembled double-dot single-electron transistor analyzed by the orthodox model considering offset charge

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      Journal of Applied Physics
      AIP Publishing

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          Spins in few-electron quantum dots

          This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for: (1) the rotation of an electron spin into a superposition of up and down, (2) the measurement of the quantum state of an individual spin and (3) the control of the interaction between two neighbouring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins (i.e. single-spintronics).
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            Current rectification by Pauli exclusion in a weakly coupled double quantum dot system.

            We observe spin blockade due to Pauli exclusion in the tunneling characteristics of a coupled quantum dot system when two same-spin electrons occupy the lowest energy state in each dot. Spin blockade only occurs in one bias direction when there is asymmetry in the electron population of the two dots, leading to current rectification. We induce the collapse of the spin blockade by applying a magnetic field to open up a new spin-triplet current-carrying channel.
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              Spontaneously organized molecular assemblies. 4. Structural characterization of n-alkyl thiol monolayers on gold by optical ellipsometry, infrared spectroscopy, and electrochemistry

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                October 07 2015
                October 07 2015
                : 118
                : 13
                : 134304
                Article
                10.1063/1.4931611
                ca86080e-92f4-4c36-9978-10d0a3b462a6
                © 2015
                History

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