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      • Record: found
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      Fabrication of high aspect ratio symmetric and asymmetric T-shaped gates for high frequency pseudomorphic HEMTs

      Author(s): , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Microelectronic Engineering
      Publisher: Elsevier BV

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          Journal
          Title: Microelectronic Engineering
          Abbreviated Title: Microelectronic Engineering
          Publisher: Elsevier BV
          ISSN (Print): 01679317
          Publication date Created: April 1990
          Publication date (Print): April 1990
          Volume: 11
          Issue: 1-4
          Pages: 105-108
          Article
          DOI: 10.1016/0167-9317(90)90082-5
          SO-VID: ca8a54f0-16d0-4d85-83df-7b2e079bbc6a
          Copyright © © 1990
          License:

          http://www.elsevier.com/tdm/userlicense/1.0/

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