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First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
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On the absorption of infrared radiation by electrons in semiconductor inversion layers
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Luminescence studies of optically pumped quantum wells in GaAs-\({\mathrm{Al}}_{x}{\mathrm{Ga}}_{1-x}\mathrm{As}\)multilayer structures
D. Kleinman, A C Gossard, W. Nordland … (1980)
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Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
A C Gossard, R. Miller, W. Wiegmann … (1984)