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Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
Preprint
S. V. Morozov ,
K. S. Novoselov ,
M. I. Katsnelson ,
F. Schedin ,
D. C. Elias ,
J. A. Jaszczak ,
A. K. Geim
28 October 2007
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Abstract
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.