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      AlGaN/GaN HEMTs-an overview of device operation and applications

      , ,
      Proceedings of the IEEE
      Institute of Electrical and Electronics Engineers (IEEE)

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          Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

            • Record: found
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            GaN: Processing, defects, and devices

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              The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

                Author and article information

                Journal
                Proceedings of the IEEE
                Proc. IEEE
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9219
                June 2002
                June 2002
                : 90
                : 6
                : 1022-1031
                Article
                10.1109/JPROC.2002.1021567
                cb9d6bab-dfe9-4f1d-b2c1-c0415df31dc6
                © 2002
                History

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