A persistent metal–insulator transition at the surface of an oxygen-deficient, epitaxial manganite film

The past two decades have shown that the exploration of properties on the nanoscale can lead to substantially new insights regarding fundamental issues, but also to novel technological perspectives. Simultaneously it became so fashionable to decorate activities with the prefix 'nano' that it has become devalued through overuse. Regardless of fashion and prejudice, this article shows that the crystallizing field of 'nanoionics' bears the conceptual and technological potential that justifies comparison with the well-acknowledged area of nanoelectronics. Demonstrating this potential implies both emphasizing the indispensability of electrochemical devices that rely on ion transport and complement the world of electronics, and working out the drastic impact of interfaces and size effects on mass transfer, transport and storage. The benefits for technology are expected to lie essentially in the field of room-temperature devices, and in particular in artificial self-sustaining structures to which both nanoelectronics and nanoionics might contribute synergistically.

Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.