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      Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

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          Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

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            Gallium arsenide and other compound semiconductors on silicon

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              Polar-on-nonpolar epitaxy

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 2012
                September 2012
                : 112
                : 5
                : 053521
                Article
                10.1063/1.4751024
                ccf2e4c8-6c87-4365-940e-472d4bce8ee3
                © 2012
                History

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