- Record: found
- Abstract: not found
- Article: not found
Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
E. A. Fitzgerald ,
Y.‐H. Xie ,
M. L. Green ,
D. Brasen ,
A. R. Kortan ,
J. Michel ,
Y.‐J Mii ,
B. E. Weir
August 12 1991
August 12 1991
Read this article at
ScienceOpenPublisher
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Most cited references17
- Record: found
- Abstract: not found
- Article: not found
Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures
R. People (1986)
- Record: found
- Abstract: not found
- Article: not found
Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
T. B. Light, S. Mader, J. Matthews (1970)
- Record: found
- Abstract: not found
- Article: not found
Near-band-gap photoluminescence of Si-Ge alloys
M I Alonso, J. Weber (1989)