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      Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

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          Abstract

          Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

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          Author and article information

          Journal
          Science
          Science (New York, N.Y.)
          American Association for the Advancement of Science (AAAS)
          1095-9203
          0036-8075
          Oct 29 1999
          : 286
          : 5441
          Affiliations
          [1 ] IBM T. J. Watson Research Center, Post Office Box 218, Yorktown Heights, NY, 10598, USA.
          Article
          7941
          10.1126/science.286.5441.945
          10542146
          ce3f26b9-714e-4dfb-9df0-9e9dc1a630ac
          History

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