Scanning thermal microscopy for accurate nanoscale device thermography

Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed in integrated circuits or plasmonic nanostructures, can be used to modify the local properties of matter, govern physical processes, activate chemical reactions and trigger biological mechanisms in living organisms. The development of high-resolution thermometry techniques is essential for understanding local thermal non-equilibrium processes during the operation of numerous nanoscale devices. Here we present a technique to map temperature fields using a scanning thermal microscope. Our method permits the elimination of tip–sample contact-related artefacts, a major hurdle that so far has limited the use of scanning probe microscopy for nanoscale thermometry. We map local Peltier effects at the metal–semiconductor contacts to an indium arsenide nanowire and self-heating of a metal interconnect with 7 mK and sub-10 nm spatial temperature resolution.

Understanding energy dissipation at the nanoscale requires the ability to probe temperature fields with nanometer resolution. Here, we describe an ultra-high vacuum (UHV)-based scanning thermal microscope (SThM) technique that is capable of quantitatively mapping temperature fields with ∼15 mK temperature resolution and ∼10 nm spatial resolution. In this technique, a custom fabricated atomic force microscope (AFM) cantilever, with a nanoscale Au-Cr thermocouple integrated into the tip of the probe, is used to measure temperature fields of surfaces. Operation in an UHV environment eliminates parasitic heat transport between the tip and the sample enabling quantitative measurement of temperature fields on metal and dielectric surfaces with nanoscale resolution. We demonstrate the capabilities of this technique by directly imaging thermal fields in the vicinity of a 200 nm wide, self-heated, Pt line. Our measurements are in excellent agreement with computational results-unambiguously demonstrating the quantitative capabilities of the technique. UHV-SThM techniques will play an important role in the study of energy dissipation in nanometer-sized electronic and photonic devices and the study of phonon and electron transport at the nanoscale.