Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Zhang, Yuewei; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth; Moseley, Michael W.; Jamal-Eddine, Zane; Akyol, Fatih

doi:10.1063/1.5017045

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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Author(s): Yuewei Zhang ¹ , Zane Jamal-Eddine ¹ , Fatih Akyol ¹ , Sanyam Bajaj ¹ , Jared M. Johnson ² , Gabriel Calderon ² , Andrew A. Allerman ³ , Michael W. Moseley ³ , Andrew M. Armstrong ³ , Jinwoo Hwang ² , Siddharth Rajan ¹ ^, ²

Publication date Created: February 12 2018

Publication date (Print): February 12 2018

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 37

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Ultraviolet light-emitting diodes based on group three nitrides

Asif Khan, Krishnan Nair Balakrishnan, Tom Katona (2008)

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222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

Jun Norimatsu, Takayoshi Takano, Kenji Tsubaki … (2009)

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Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Takayoshi Takano, Hideki Hirayama, Kenji Tsubaki … (2017)

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Author and article information

Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: February 12 2018

Publication date (Print): February 12 2018

Volume: 112

Issue: 7

Page: 071107

Affiliations

[1 ]Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

[2 ]Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

[3 ]Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Article

DOI: 10.1063/1.5017045

SO-VID: d02f7cf8-6593-4b9d-b082-600d74cece44

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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

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Most cited references 37

Ultraviolet light-emitting diodes based on group three nitrides

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

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