Fractional Chern Insulator

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.

We present a simple prescription to flatten isolated Bloch bands with a nonzero Chern number. We first show that approximate flattening of bands with a nonzero Chern number is possible by tuning ratios of nearest-neighbor and next-nearest-neighbor hoppings in the Haldane model and, similarly, in the chiral-π-flux square lattice model. Then we show that perfect flattening can be attained with further range hoppings that decrease exponentially with distance. Finally, we add interactions to the model and present exact diagonalization results for a small system at 1/3 filling that support (i) the existence of a spectral gap, (ii) that the ground state is a topological state, and (iii) that the Hall conductance is quantized.