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      A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles

      Author(s): ,
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          The Continuum Theory of Lattice Defects

          J.D. Eshelby (1956)
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            Substrates for gallium nitride epitaxy

            L. Liu, J.H. Edgar (2002)
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              The elastic interaction of point defects

              J.D. Eshelby (1955)
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: January 14 2013
                Publication date (Print): January 14 2013
                Volume: 113
                Issue: 2
                Page: 024909
                Article
                DOI: 10.1063/1.4773343
                SO-VID: d2cfaa19-8d54-429c-9a2b-1b546700e87b
                Copyright © © 2013
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