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InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
Author(s):
M WU
,
J. LEACH
,
X. NI
,
X Li
,
J XIE
,
S DOGAN
,
Ü Özgür
,
H Morkoc
,
T. Paskova
,
E Preble
,
K. EVANS
,
Chang-Zhi Lu
,
M Wu
Publication date:
2010
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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Academicus International Scientific Journal
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DOI::
10.1116/1.3481138
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