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      400-mW single-frequency 660-nm semiconductor laser

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          Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature

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            GaInP/AlGaInP 670 nm singlemode DBR laser

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              Low threshold CW operation of GaInP/AlGaInP DFB lasers at 680 nm

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                Author and article information

                Journal
                IEEE Photonics Technology Letters
                IEEE Photon. Technol. Lett.
                Institute of Electrical and Electronics Engineers (IEEE)
                1041-1135
                1941-0174
                July 1999
                July 1999
                : 11
                : 7
                : 791-793
                Article
                10.1109/68.769709
                d3eba4de-b908-4c79-88e1-82e0b9d1c28d
                © 1999
                History

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