Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors

Rojeski, Ronald A.; Eisen, Yosef; East, Jack R.; Terry, Fred L.; Knoll, Glenn F; McGregor, Douglas S.

doi:10.1063/1.356577

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Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors

Author(s): Douglas S. McGregor , Ronald A. Rojeski , Glenn F. Knoll , Fred L. Terry , Jack East , Yosef Eisen

Publication date Created: June 15 1994

Publication date (Print): June 15 1994

Journal: Journal of Applied Physics

Publisher: AIP Publishing

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Native defects in gallium arsenide

J. C. Bourgoin, H. J. von Bardeleben, D Stiévenard (1988)

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Compensation mechanisms in GaAs

J. P. Farges, G. Poiblaud, J. Hallais … (1980)

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Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions

C.T. Sah, V.G.K. Reddi (1964)

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Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: June 15 1994

Publication date (Print): June 15 1994

Volume: 75

Issue: 12

Pages: 7910-7915

Article

DOI: 10.1063/1.356577

SO-VID: d40fad38-baf5-4e95-a862-cb84c124b5fa

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Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors

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Electron Channelling Contrast Imaging (ECCI)

Most cited references 19

Native defects in gallium arsenide

Compensation mechanisms in GaAs

Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions

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