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      Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

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          Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

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            Characterization of threading dislocations in GaN epitaxial layers

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              The role of threading dislocations in the physical properties of GaN and its alloys

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                August 27 2007
                August 27 2007
                : 91
                : 9
                : 094106
                Article
                10.1063/1.2777151
                d419e86d-fc40-4510-9e65-b758dfe5c9c7
                © 2007
                History

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