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      A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu–Ni gradient enclosure

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          Abstract

          Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength.

          Abstract

          Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu–Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu–Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min −1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.

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          Most cited references 23

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          Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

          Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices. © 2011 American Chemical Society
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            Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper.

            Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small (∼ 0.5 μm(2)) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD-grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h-BN films are unknown. Here, we report the growth and characterization of novel large area h-BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h-BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal-shape h-BN domain observed is 35 μm(2), which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects.
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              Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors.

              Viable and general techniques that allow effective size control of triangular-shaped, single-crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h-BN domains, and the cleaning of the h-BN surface to achieve reliable graphene device quality are reported for the first time. This study points to a critical role of the interfacial properties between the graphene and the monolayer h-BN in determining reliable, enhanced graphene-device performance.
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                Author and article information

                Contributors
                Journal
                RSCACL
                RSC Advances
                RSC Adv.
                Royal Society of Chemistry (RSC)
                2046-2069
                April 23 2020
                2020
                : 10
                : 27
                : 16088-16093
                Affiliations
                [1 ]State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
                [2 ]Wuhan University of Technology
                [3 ]Wuhan 430070
                [4 ]People's Republic of China
                [5 ]Interdisciplinary Nanoscience Center (iNANO)
                [6 ]Aarhus University
                [7 ]DK-8000 Aarhus
                [8 ]Denmark
                Article
                10.1039/D0RA00734J
                © 2020
                Product
                Self URI (article page): http://xlink.rsc.org/?DOI=D0RA00734J

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