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      Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence

      Journal of Applied Physics
      AIP Publishing

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          Unusually low surface-recombination velocity on silicon and germanium surfaces.

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            Auger coefficients for highly doped and highly excited silicon

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              Auger recombination in silicon atlowcarrier densities

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                July 1998
                July 1998
                : 84
                : 1
                : 275-283
                Article
                10.1063/1.368024
                d43afa16-764d-4829-815d-1daf784df0c4
                © 1998
                History

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