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Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence
Author(s):
Jan Linnros
Publication date
Created:
July 1998
Publication date
(Print):
July 1998
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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26
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Unusually low surface-recombination velocity on silicon and germanium surfaces.
E Yablonovitch
,
D. L. Allara
,
C Chang
…
(1986)
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Auger coefficients for highly doped and highly excited silicon
W. Schmid
,
J. Dziewior
(1977)
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Auger recombination in silicon atlowcarrier densities
T. Gmitter
,
E Yablonovitch
(1986)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
July 1998
Publication date (Print):
July 1998
Volume
: 84
Issue
: 1
Pages
: 275-283
Article
DOI:
10.1063/1.368024
SO-VID:
d43afa16-764d-4829-815d-1daf784df0c4
Copyright ©
© 1998
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