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      Electric-field control of magnetic domain wall motion and local magnetization reversal

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          Abstract

          Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO 3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics.

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          Most cited references14

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            The emergence of spin electronics in data storage.

            Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.
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              Magnetic domain-wall logic.

              "Spintronics," in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.
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                Author and article information

                Journal
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                10 February 2012
                2012
                : 2
                : 258
                Affiliations
                [1 ]simpleNanoSpin, Department of Applied Physics, Aalto University School of Science , P.O. Box 15100, FI-00076 Aalto, Finland
                Author notes
                Article
                srep00258
                10.1038/srep00258
                3277214
                22355770
                d462f613-b936-470a-9247-b301d4ef5d4e
                Copyright © 2012, Macmillan Publishers Limited. All rights reserved

                This work is licensed under a Creative Commons Attribution-NonCommercial-ShareALike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/

                History
                : 24 October 2011
                : 23 January 2012
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