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      Chemical sensors based on polymer composites with carbon nanotubes and graphene: the role of the polymer

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          Abstract

          The performance of chemical sensors based on polymer nanocomposites with CNTs and graphene is revised, highlighting the role of the polymeric material.

          Abstract

          This review provides an overview of recent research on chemical sensors based on polymer composites with carbon nanotubes (CNTs) and graphene (G) for quantitative and qualitative analysis in diverse application fields such as biosensing (DNA, enzymes, proteins, antigens and metabolites), and chemical and gas sensing using electrochemical and optical detection methods. Both CNTs and G show outstanding electrical, chemical, electrochemical and optical properties that make them ideal candidates for use in chemical sensors. The incorporation of polymers into the development of this type of sensor not only improves the CNT and G dispersion, but also enhances some of their properties like redox behaviour and biocompatibility, and provides additional properties such as photoelectric or swelling capacity. Moreover, unique synergistic effects arising from the combination of the matrix and nanofiller contributions are described by means of several examples highlighting the most important achievements in this field. Special emphasis has been placed throughout the review on analysing the role of the polymer in different sensing platforms. The combination of polymers with carbon nanomaterials for the preparation of chemical sensors opens up exciting areas of research due to their biocompatibility, and excellent sensitivity and selectivity.

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          Most cited references212

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          Is Open Access

          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Is Open Access

            The rise of graphene

            Graphene is a rapidly rising star on the horizon of materials science and condensed matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed matter physics, where quantum relativistic phenomena, some of which are unobservable in high energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.
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              Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

              Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.
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                Author and article information

                Journal
                JMCAET
                J. Mater. Chem. A
                J. Mater. Chem. A
                Royal Society of Chemistry (RSC)
                2050-7488
                2050-7496
                2014
                2014
                : 2
                : 35
                : 14289-14328
                Article
                10.1039/C4TA02159B
                d4a7e3bd-4164-4f03-a8ac-f4734401a34c
                © 2014
                History

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