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Study of oxygen chemisorption on the GaN(0001)‐(1×1) surface
Author(s):
V. M. Bermudez
Publication date
Created:
July 15 1996
Publication date
(Print):
July 15 1996
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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UCL: UN SDG 01 No Poverty
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Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
B. Sverdlov
,
H Morkoç
,
S. Strite
…
(1994)
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High‐Temperature Vaporization Behavior of Oxides II. Oxides of Be, Mg, Ca, Sr, Ba, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, and Hg
R. H. Lamoreaux
,
D. L. Hildenbrand
,
L. Brewer
(1987)
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Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP
W. E. Spicer
,
I. Lindau
,
P Pianetta
…
(1978)
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Author and article information
Journal
Journal ID (publisher-id):
JAPIAU
Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
July 15 1996
Publication date (Print):
July 15 1996
Volume
: 80
Issue
: 2
Pages
: 1190-1200
Article
DOI:
10.1063/1.362924
SO-VID:
d4ab9cf1-b115-447a-be8d-a22b75887331
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© 1996
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