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      Study of oxygen chemisorption on the GaN(0001)‐(1×1) surface

      Journal of Applied Physics
      AIP Publishing

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          Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

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            High‐Temperature Vaporization Behavior of Oxides II. Oxides of Be, Mg, Ca, Sr, Ba, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, and Hg

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              Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP

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                Author and article information

                Journal
                JAPIAU
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                July 15 1996
                July 15 1996
                : 80
                : 2
                : 1190-1200
                Article
                10.1063/1.362924
                d4ab9cf1-b115-447a-be8d-a22b75887331
                © 1996
                History

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