Direct and Electroabsorption Modulation of a III–V-on-Silicon DFB Laser at 56 Gb/s

Abbasi, Amin; Moeneclaey, Bart; Verbist, Jochem; Yin, Xin; Bauwelinck, Johan; Duan, Guang-Hua; Roelkens, Gunther; Morthier, Geert

doi:10.1109/JSTQE.2017.2708606

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Direct and Electroabsorption Modulation of a III–V-on-Silicon DFB Laser at 56 Gb/s

Author(s): Amin Abbasi , Bart Moeneclaey , Jochem Verbist , Xin Yin , Johan Bauwelinck , Guang-Hua Duan , Gunther Roelkens , Geert Morthier

Publication date (Print): November 2017

Journal: IEEE Journal of Selected Topics in Quantum Electronics

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate

P. van Veldhoven, G Roelkens, S. Stankovic … (2013)

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56 Gb/s Germanium Waveguide Electro-Absorption Modulator

Dries Van Thourhout, Philippe Absil, Joris Van Campenhout … (2016)

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Active Components for 50 Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform

M. Pantouvaki, S. Srinivasan, Y. Ban … (2017)

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Journal

Title: IEEE Journal of Selected Topics in Quantum Electronics

Abbreviated Title: IEEE J. Select. Topics Quantum Electron.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 1077-260X

ISSN (Electronic): 1558-4542

Publication date Created: November 2017

Publication date (Print): November 2017

Volume: 23

Issue: 6

Pages: 1-7

Article

DOI: 10.1109/JSTQE.2017.2708606

SO-VID: d4adc213-6600-46af-8fe3-37a6a0d789da

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Direct and Electroabsorption Modulation of a III–V-on-Silicon DFB Laser at 56 Gb/s

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Model Reduction of Parametrized Systems 2015

Most cited references 20

Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate

56 Gb/s Germanium Waveguide Electro-Absorption Modulator

Active Components for 50 Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform

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