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      Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

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      Journal of Applied Physics

      AIP Publishing

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          Most cited references 39

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          Electronic properties of two-dimensional systems

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            On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

             M Iwase,  H. Tango,  S Takagi (1994)
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              Surface Plasma Oscillations of a Degenerate Electron Gas

               E Stern,  R. Ferrell (1960)
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                November 2001
                November 2001
                : 90
                : 9
                : 4587-4608
                Article
                10.1063/1.1405826
                © 2001
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