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      Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

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      Journal: Journal of Applied Physics

      Publisher: AIP Publishing

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          Electronic properties of two-dimensional systems

           Tsuneya Ando,  Alan Fowler,  Frank Stern (1982)
          Article 0 comments Cited 2126 times – based on 0 reviews     Review now
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            On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

             M Iwase,  H. Tango,  S Takagi … (1994)
            Article 0 comments Cited 213 times – based on 0 reviews     Review now
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              Surface Plasma Oscillations of a Degenerate Electron Gas

               E Stern,  R. Ferrell (1960)
              Article 0 comments Cited 142 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: November 2001
                Publication date (Print): November 2001
                Volume: 90
                Issue: 9
                Pages: 4587-4608
                Article
                DOI: 10.1063/1.1405826
                Copyright statement: © 2001
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