We describe a method to enhance power conversion efficiency (PCE) of MAPbI 3 perovskite solar cell by inserting a FAPbX 3 perovskite quantum dots (QD-FAPbX 3) layer. The MAPbI 3 and QD-FAPbX 3 layers were prepared using a simple, rapid spin-coating method in a nitrogen-filled glove box. The solar cell structure consists of ITO/PEDOT:PSS/MAPbI 3/QD-FAPbX 3/C 60/Ag, where PEDOT:PSS, MAPbI 3, QD-FAPbX 3, and C 60 were used as the hole transport layer, light-absorbing layer, absorption enhance layer, and electron transport layer, respectively. The MAPbI 3/QD-FAPbX 3 solar cells exhibit a PCE of 7.59%, an open circuit voltage (Voc) of 0.9 V, a short-circuit current density (Jsc) of 17.4 mA/cm 2, and a fill factor (FF) of 48.6%, respectively.