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      Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

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          A reliable approach to charge-pumping measurements in MOS transistors

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            Charge pumping in MOS devices

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              Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                00189383
                July 1989
                : 36
                : 7
                : 1318-1335
                Article
                10.1109/16.30938
                d5eed67b-c9b6-4199-b518-83f78d34114c
                © 1989
                History

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